View STE250N06_77033.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

STE250N06
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
TYPE STE250N06
s s
VDSS 60 V
R DS(on) < 0.004
ID 250 A
4 3
s
s s
s s s
s
HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH80N06 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743)
1 2
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
INDUSTRIAL APPLICATIONS: SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
s
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (*) P tot T stg Tj V ISO Parameter Drain-Source Voltage (V GS = 0) Drain-Gate Voltage (R GS = 20 k) Gate-Source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS)
o o
Value 60 60 20 250 155 750 450 3.6 -55 to 150 150 2500
Unit V V V A A A W W/o C
o o
C C
V
(*) Pulse width limited by safe operating area
May 1995
1/8
STE250N06
THERMAL DATA
R thj-case R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.27 0.05
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V(BR)DSS I DS S I GSS Parameter Drain-source Breakdown Voltage I D = 1 mA Test Conditions V GS = 0 V Min. 60 400 2 400 Typ. Max. Unit V A mA nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = 20 V
T c = 125 o C
ON ()
Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10V Test Conditions I D = 1 mA I D = 125 A Min. 2 Typ. Max. 4 0.004 Unit V
DYNAMIC
Symbol gfs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS = 15 V V DS = 25 V I D = 125 A f = 1 MHz VGS = 0 V Min. 100 25 10000 3000 Typ. Max. Unit S nF pF pF
SWITCHING ON
Symbol t d(on) tr (di/dt) on Parameter Turn-on Time Rise Time Turn-on Current Slope Test Conditions V DD = 25 V ID = 125 A R G = 4.7 V GS = 10 V (see test circuit, figure 1) V DD = 40 V ID = 250 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) V DD = 40 V V GS = 10 V ID = 250 A Min. Typ. 95 300 440 Max. Unit ns ns A/s
Qg
Total Gate Charge
475
nC
2/8
STE250N06
ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF
Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 40 V I D = 250 A R G = 4.7 V GS = 10 V (see test circuit, figure 3) Min. Typ. 140 745 1000 Max. Unit ns ns ns
SOURCE DRAIN DIODE
Symbol IS D I SDM (*) VS D () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 250 A V GS = 0 210 1.31 12.5 Test Conditions Min. Typ. Max. 250 750 1.6 Unit A A V ns C A
I SD = 250 A di/dt = 100 A/s V DD = 25 V T j = 150 o C (see test circuit, figure 3)
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STE250N06
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/8
STE250N06
Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized Breakdown Voltage vs Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
5/8
STE250N06
Cross-over Time
Source-drain Diode Forward Characteristics
Fig. 1: Switching Times Test Circuits For Resistive Load
Fig. 2: Gate Charge Test Circuit
Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times
6/8
STE250N06
ISOTOP MECHANICAL DATA
DIM. MIN. A B C D E F G H J K L M N O P 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 5.5 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.216 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248
G O B
A
N
D
J K L M
H
C
E
F
0041565
7/8
STE250N06
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
8/8

▲Up To Search▲

Price & Availability of STE250N06

	To Download STE250N06 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .